Технічний опис APT65GP60L2DQ2G Microchip Technology
Description: IGBT 600V 198A 833W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A, IGBT Type: PT, Td (on/off) @ 25°C: 30ns/90ns, Switching Energy: 605µJ (on), 895µJ (off), Test Condition: 400V, 65A, 5Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 198 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 250 A, Power - Max: 833 W.
Інші пропозиції APT65GP60L2DQ2G
| Фото | Назва | Виробник | Інформація |
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APT65GP60L2DQ2G | Виробник : Microchip Technology |
 Trans IGBT Chip N-CH 600V 198A 833W 3-Pin(3+Tab) TO-264 MAX Tube |
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APT65GP60L2DQ2G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX Mounting: THT Kind of package: tube Case: TO264MAX Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Gate-emitter voltage: ±30V Collector current: 96A Pulsed collector current: 250A Turn-on time: 85ns Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 833W кількість в упаковці: 1 шт |
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| APT65GP60L2DQ2G | Виробник : MICROSEMI |
TO264-MAX/INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI APT65GP60 кількість в упаковці: 1 шт |
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APT65GP60L2DQ2G | Виробник : Microchip Technology |
Description: IGBT 600V 198A 833W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A IGBT Type: PT Td (on/off) @ 25°C: 30ns/90ns Switching Energy: 605µJ (on), 895µJ (off) Test Condition: 400V, 65A, 5Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 198 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 250 A Power - Max: 833 W |
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APT65GP60L2DQ2G | Виробник : Microchip Technology |
IGBT Transistors IGBT PT MOS 7 Combi 600 V 65 A TO-264 MAX |
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APT65GP60L2DQ2G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 96A; 833W; TO264MAX Mounting: THT Kind of package: tube Case: TO264MAX Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Gate-emitter voltage: ±30V Collector current: 96A Pulsed collector current: 250A Turn-on time: 85ns Turn-off time: 0.22µs Type of transistor: IGBT Power dissipation: 833W |
товар відсутній |