Технічний опис APT70GR120B2 Microchip Technology
Description: IGBT 1200V 160A 961W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 33ns/278ns, Switching Energy: 3.82mJ (on), 2.58mJ (off), Test Condition: 600V, 70A, 4.3Ohm, 15V, Gate Charge: 544 nC, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 280 A, Power - Max: 961 W.
Інші пропозиції APT70GR120B2
| Фото | Назва | Виробник | Інформація |
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APT70GR120B2 | Виробник : Microchip Technology |
 Trans IGBT Chip N-CH 1200V 160A 961W 3-Pin(3+Tab) T-MAX Tube |
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APT70GR120B2 | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3 Type of transistor: IGBT Technology: NPT Ultra Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 70A Power dissipation: 961W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 280A Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 81ns Turn-off time: 394ns кількість в упаковці: 1 шт |
товар відсутній |
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APT70GR120B2 | Виробник : Microchip Technology |
Description: IGBT 1200V 160A 961W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 33ns/278ns Switching Energy: 3.82mJ (on), 2.58mJ (off) Test Condition: 600V, 70A, 4.3Ohm, 15V Gate Charge: 544 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 280 A Power - Max: 961 W |
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| APT70GR120B2 | Виробник : Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, 70A, TO-247 T-MAX |
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APT70GR120B2 | Виробник : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 70A; 961W; TO247-3 Type of transistor: IGBT Technology: NPT Ultra Fast IGBT Collector-emitter voltage: 1.2kV Collector current: 70A Power dissipation: 961W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 280A Mounting: THT Gate charge: 412nC Kind of package: tube Turn-on time: 81ns Turn-off time: 394ns |
товар відсутній |