APT70GR65B Microchip Technology

Description: IGBT 650V 134A 595W TO-247, Power - Max: 595 W, Current - Collector Pulsed (Icm): 260 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 134 A, Part Status: Active, Gate Charge: 305 nC, Test Condition: 433V, 70A, 4.3Ohm, 15V, Switching Energy: 1.51mJ (on), 1.46mJ (off), Td (on/off) @ 25°C: 19ns/170ns, IGBT Type: NPT, Supplier Device Package: TO-247, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.