Технічний опис APT7M120S Microsemi
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK, Mounting: SMD, Pulsed drain current: 28A, Power dissipation: 335W, Gate charge: 80nC, Polarisation: unipolar, Technology: POWER MOS 8®, Drain current: 5A, Kind of channel: enhanced, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Case: D3PAK, On-state resistance: 2.1Ω, Gate-source voltage: ±30V, кількість в упаковці: 1 шт.
Інші пропозиції APT7M120S
| Фото | Назва | Виробник | Інформація |
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APT7M120S | Виробник : MICROCHIP (MICROSEMI) |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK Mounting: SMD Pulsed drain current: 28A Power dissipation: 335W Gate charge: 80nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: D3PAK On-state resistance: 2.1Ω Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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APT7M120S | Виробник : Microsemi Corporation |
Description: MOSFET N-CH 1200V 8A D3PAK |
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APT7M120S | Виробник : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 5A; Idm: 28A; 335W; D3PAK Mounting: SMD Pulsed drain current: 28A Power dissipation: 335W Gate charge: 80nC Polarisation: unipolar Technology: POWER MOS 8® Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: D3PAK On-state resistance: 2.1Ω Gate-source voltage: ±30V |
товар відсутній |