Технічний опис APT8020B2LLG Microchip Technology
Description: MOSFET N-CH 800V 38A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 19A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V.
Інші пропозиції APT8020B2LLG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT8020B2LLG | Виробник : MICROSEMI |
 T-MAX/38 A, 800 V, 0.2 ohm, N-CHANNEL, Si, POWER,MOSFET APT8020кількість в упаковці: 1 шт |
товару немає в наявності |
||
 |
APT8020B2LLG | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 38A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 19A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V |
товару немає в наявності |
|
 |
APT8020B2LLG | Виробник : Microchip Technology |
MOSFETs MOSFET MOS7 800 V 20 Ohm TO-247 MAX |
товару немає в наявності |
|
| APT8020B2LLG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 800V Drain current: 38A Power dissipation: 694W Case: T-Max Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |