APT8065BVFRG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис APT8065BVFRG MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 800V 13A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247 [B], Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V.
Інші пропозиції APT8065BVFRG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
APT8065BVFRG | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 13A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
товар відсутній |
||
APT8065BVFRG | Виробник : Microchip Technology | MOSFET FG, FREDFET, 800V, 0.65_OHM, TO-247, RoHS |
товар відсутній |
||
APT8065BVFRG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Type of transistor: N-MOSFET Case: TO247-3 Mounting: THT Power dissipation: 280W On-state resistance: 0.65Ω Polarisation: unipolar Technology: POWER MOS 5® Gate charge: 225nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 52A Drain-source voltage: 800V Drain current: 13A |
товар відсутній |