APT8065BVRG

APT8065BVRG Microchip Technology


8065bvr.pdf Виробник: Microchip Technology
Trans MOSFET N-CH 800V 13A 3-Pin(3+Tab) TO-247 Tube
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Технічний опис APT8065BVRG Microchip Technology

Description: MOSFET N-CH 800V 13A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247 [B], Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V.

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APT8065BVRG APT8065BVRG Виробник : MICROCHIP (MICROSEMI) 6502-apt8065bvrg-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
кількість в упаковці: 1 шт
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APT8065BVRG APT8065BVRG Виробник : Microchip Technology 6502-apt8065bvrg-datasheet Description: MOSFET N-CH 800V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
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APT8065BVRG APT8065BVRG Виробник : Microchip Technology APT8065BVR_B-1859345.pdf MOSFET FG, MOSFET, 800V, TO-247, RoHS
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APT8065BVRG APT8065BVRG Виробник : MICROCHIP (MICROSEMI) 6502-apt8065bvrg-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A
Type of transistor: N-MOSFET
Case: TO247-3
Mounting: THT
Power dissipation: 280W
On-state resistance: 0.65Ω
Polarisation: unipolar
Technology: POWER MOS 5®
Gate charge: 225nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 52A
Drain-source voltage: 800V
Drain current: 13A
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