Технічний опис APT8065BVRG Microchip Technology
Description: MOSFET N-CH 800V 13A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247 [B], Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V.
Інші пропозиції APT8065BVRG
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APT8065BVRG | Виробник : Microchip Technology |
 Description: MOSFET N-CH 800V 13A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
товару немає в наявності |
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APT8065BVRG | Виробник : Microchip Technology |
MOSFETs MOSFET MOS5 800 V 65 Ohm TO-247 |
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APT8065BVRG | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Technology: POWER MOS 5® Mounting: THT Case: TO247-3 Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 225nC On-state resistance: 0.65Ω Drain current: 13A Gate-source voltage: ±30V Power dissipation: 280W Pulsed drain current: 52A Drain-source voltage: 800V |
товару немає в наявності |