Технічний опис APT8065SVRG Microchip Technology
Description: MOSFET N-CH 800V 13A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D3Pak, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V.
Інші пропозиції APT8065SVRG
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APT8065SVRG | Виробник : Microchip Technology |
 Description: MOSFET N-CH 800V 13A D3PAKPackaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D3Pak Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
товару немає в наявності |
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APT8065SVRG | Виробник : Microchip Technology |
MOSFETs MOSFET MOS5 800 V 65 Ohm TO-268 |
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APT8065SVRG | Виробник : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Technology: POWER MOS 5® Mounting: SMD Case: D3PAK Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 225nC On-state resistance: 0.65Ω Drain current: 13A Gate-source voltage: ±30V Power dissipation: 280W Pulsed drain current: 52A Drain-source voltage: 800V |
товару немає в наявності |