Технічний опис APT80GA60B Microchip Technology
Description: IGBT 600V 143A 625W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 23ns/158ns, Switching Energy: 840µJ (on), 751µJ (off), Test Condition: 400V, 47A, 4.7Ohm, 15V, Gate Charge: 230 nC, Current - Collector (Ic) (Max): 143 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 625 W.
Інші пропозиції APT80GA60B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APT80GA60B | Виробник : MICROCHIP TECHNOLOGY |
 APT80GA60B THT IGBT transistors |
товару немає в наявності |
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APT80GA60B | Виробник : Microchip Technology |
Description: IGBT 600V 143A 625W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 23ns/158ns Switching Energy: 840µJ (on), 751µJ (off) Test Condition: 400V, 47A, 4.7Ohm, 15V Gate Charge: 230 nC Current - Collector (Ic) (Max): 143 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 240 A Power - Max: 625 W |
товару немає в наявності |
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APT80GA60B | Виробник : Microchip Technology |
IGBT Transistors FG, IGBT, 600V, TO-247 |
товару немає в наявності |