Технічний опис APT80GA90B Microchip Technology
Description: IGBT PT 900V 145A TO247, Power - Max: 625 W, Current - Collector Pulsed (Icm): 239 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector (Ic) (Max): 145 A, Gate Charge: 200 nC, Test Condition: 600V, 47A, 4.7Ohm, 15V, Switching Energy: 1652µJ (on), 1389µJ (off), Td (on/off) @ 25°C: 18ns/149ns, IGBT Type: PT, Supplier Device Package: TO-247 [B], Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A, Input Type: Standard.
Інші пропозиції APT80GA90B за ціною від 776.46 грн до 776.46 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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APT80GA90B | Microchip Technology |
 Description: IGBT PT 900V 145A TO247Power - Max: 625 W Current - Collector Pulsed (Icm): 239 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 145 A Gate Charge: 200 nC Test Condition: 600V, 47A, 4.7Ohm, 15V Switching Energy: 1652µJ (on), 1389µJ (off) Td (on/off) @ 25°C: 18ns/149ns IGBT Type: PT Supplier Device Package: TO-247 [B] Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Input Type: Standard |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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APT80GA90B | Microchip / Microsemi |
IGBT Transistors FG, IGBT, 900V, TO-247 |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| APT80GA90B |
|
Виробник: Microchip Technology
Description: IGBT PT 900V 145A TO247
Power - Max: 625 W
Current - Collector Pulsed (Icm): 239 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 200 nC
Test Condition: 600V, 47A, 4.7Ohm, 15V
Switching Energy: 1652µJ (on), 1389µJ (off)
Td (on/off) @ 25°C: 18ns/149ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Input Type: Standard
Description: IGBT PT 900V 145A TO247
Power - Max: 625 W
Current - Collector Pulsed (Icm): 239 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 145 A
Gate Charge: 200 nC
Test Condition: 600V, 47A, 4.7Ohm, 15V
Switching Energy: 1652µJ (on), 1389µJ (off)
Td (on/off) @ 25°C: 18ns/149ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Input Type: Standard
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 776.46 грн |
| APT80GA90B |
|
Виробник: Microchip / Microsemi
IGBT Transistors FG, IGBT, 900V, TO-247
IGBT Transistors FG, IGBT, 900V, TO-247
на замовлення 69 шт:
термін постачання 21-30 дні (днів)