APT85GR120J Microchip Technology
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2341.22 грн |
| 100+ | 1993.23 грн |
| 250+ | 1694.48 грн |
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31-40 дні (днів)
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Технічний опис APT85GR120J Microchip Technology
Description: IGBT MOD 1200V 116A 543W SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A, NTC Thermistor: No, Supplier Device Package: SOT-227, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 116 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 543 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 8.4 nF @ 25 V.
Інші пропозиції APT85GR120J
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
APT85GR120J | Microchip Technology |
 Description: IGBT MOD 1200V 116A 543W SOT227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A NTC Thermistor: No Supplier Device Package: SOT-227 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 116 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 543 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 8.4 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| APT85GR120J | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Type of semiconductor module: IGBT Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Mechanical mounting: screw Pulsed collector current: 340A Application: for UPS; Inverter; motors Max. off-state voltage: 1.2kV Electrical mounting: screw Kind of package: tube Semiconductor structure: single transistor Case: SOT227B Gate-emitter voltage: ±30V Collector current: 85A |
товару немає в наявності |
В кошику од. на суму грн. |
| APT85GR120J |
|
Виробник: Microchip Technology
Description: IGBT MOD 1200V 116A 543W SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8.4 nF @ 25 V
Description: IGBT MOD 1200V 116A 543W SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 8.4 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APT85GR120J |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 340A
Application: for UPS; Inverter; motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 85A
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Type of semiconductor module: IGBT
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Mechanical mounting: screw
Pulsed collector current: 340A
Application: for UPS; Inverter; motors
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Kind of package: tube
Semiconductor structure: single transistor
Case: SOT227B
Gate-emitter voltage: ±30V
Collector current: 85A
товару немає в наявності
В кошику
од. на суму грн.