Технічний опис APT94N65B2C6 Microchip Technology
Description: MOSFET N-CH 650V 95A T-MAX, Packaging: Bulk, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V, Power Dissipation (Max): 833W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.5mA, Supplier Device Package: T-MAX™ [B2], Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V.
Інші пропозиції APT94N65B2C6
| Фото | Назва | Виробник | Інформація |
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| APT94N65B2C6 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 61A Pulsed drain current: 282A Power dissipation: 833W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 0.32µC Kind of channel: enhancement Technology: CoolMOS™ кількість в упаковці: 1 шт |
товару немає в наявності |
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APT94N65B2C6 | Виробник : Microchip Technology |
Description: MOSFET N-CH 650V 95A T-MAX Packaging: Bulk Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V Power Dissipation (Max): 833W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V |
товару немає в наявності |
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APT94N65B2C6 | Виробник : Microchip / Microsemi |
 MOSFET FG, MOSFET, TO-247 T-MAX, RoHS |
товару немає в наявності |
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| APT94N65B2C6 | Виробник : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 61A Pulsed drain current: 282A Power dissipation: 833W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 0.32µC Kind of channel: enhancement Technology: CoolMOS™ |
товару немає в наявності |