APT94N65B2C6 Microchip Technology
Виробник: Microchip Technology
Description: MOSFET N-CH 650V 95A T-MAX
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V
Відгуки про товар
Написати відгук
Технічний опис APT94N65B2C6 Microchip Technology
Description: MOSFET N-CH 650V 95A T-MAX, Packaging: Bulk, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V, Power Dissipation (Max): 833W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.5mA, Supplier Device Package: T-MAX™ [B2], Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V.
Інші пропозиції APT94N65B2C6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
APT94N65B2C6 | Виробник : Microchip / Microsemi |
 MOSFET FG, MOSFET, TO-247 T-MAX, RoHS |
товару немає в наявності |