Технічний опис APTC60AM35SCTG Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 416W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 72A, Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V, Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 2mA, Supplier Device Package: SP4.
Інші пропозиції APTC60AM35SCTG
| Фото | Назва | Виробник | Інформація |
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Ціна |
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APTC60AM35SCTG | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 72A Case: SP4 Electrical mounting: FASTON connectors On-state resistance: 35mΩ Pulsed drain current: 288A Power dissipation: 416W Technology: CoolMOS™ Gate-source voltage: ±30V Mechanical mounting: screw кількість в упаковці: 1 шт |
товару немає в наявності |
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APTC60AM35SCTG | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 600V 72A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP4 |
товару немає в наявності |
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| APTC60AM35SCTG | Виробник : Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
товару немає в наявності |
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APTC60AM35SCTG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 72A Case: SP4 Electrical mounting: FASTON connectors On-state resistance: 35mΩ Pulsed drain current: 288A Power dissipation: 416W Technology: CoolMOS™ Gate-source voltage: ±30V Mechanical mounting: screw |
товару немає в наявності |