APTC60AM35SCTG Microchip Technology
Виробник: Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 416W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP4
Відгуки про товар
Написати відгук
Технічний опис APTC60AM35SCTG Microchip Technology
Description: MOSFET 2N-CH 600V 72A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 416W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 72A, Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 36A, 10V, Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 2mA, Supplier Device Package: SP4.
Інші пропозиції APTC60AM35SCTG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| APTC60AM35SCTG | Microsemi |
Discrete Semiconductor Modules Power Module - SiC |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
APTC60AM35SCTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W Electrical mounting: FASTON connectors Mechanical mounting: screw Pulsed drain current: 288A Type of semiconductor module: MOSFET transistor Power dissipation: 416W Technology: CoolMOS™ Drain current: 72A Drain-source voltage: 600V Gate-source voltage: ±30V Semiconductor structure: diode/transistor Case: SP4 On-state resistance: 35mΩ |
товару немає в наявності |
В кошику од. на суму грн. |
| APTC60AM35SCTG |
|
Виробник: Microsemi
Discrete Semiconductor Modules Power Module - SiC
Discrete Semiconductor Modules Power Module - SiC
товару немає в наявності
В кошику
од. на суму грн.
| APTC60AM35SCTG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Pulsed drain current: 288A
Type of semiconductor module: MOSFET transistor
Power dissipation: 416W
Technology: CoolMOS™
Drain current: 72A
Drain-source voltage: 600V
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 35mΩ
Category: Transistor modules
Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Pulsed drain current: 288A
Type of semiconductor module: MOSFET transistor
Power dissipation: 416W
Technology: CoolMOS™
Drain current: 72A
Drain-source voltage: 600V
Gate-source voltage: ±30V
Semiconductor structure: diode/transistor
Case: SP4
On-state resistance: 35mΩ
товару немає в наявності
В кошику
од. на суму грн.