Технічний опис APTC60AM45BC1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 600V; 38A; SP1; Press-in PCB; 250W, Case: SP1, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: CoolMOS™; SiC, Gate-source voltage: ±20V, Topology: boost chopper; MOSFET half-bridge, Pulsed drain current: 130A, Type of semiconductor module: MOSFET transistor, Drain-source voltage: 600V, Drain current: 38A, On-state resistance: 45mΩ, Semiconductor structure: SiC diode/transistor, Power dissipation: 250W, кількість в упаковці: 1 шт.
Інші пропозиції APTC60AM45BC1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APTC60AM45BC1G | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 600V; 38A; SP1; Press-in PCB; 250W Case: SP1 Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SiC Gate-source voltage: ±20V Topology: boost chopper; MOSFET half-bridge Pulsed drain current: 130A Type of semiconductor module: MOSFET transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 250W кількість в упаковці: 1 шт |
товару немає в наявності |
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APTC60AM45BC1G | Виробник : Microchip Technology |
Description: MOSFET 3N-CH 600V 49A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 3 N Channel (Phase Leg + Boost Chopper) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SP1 |
товару немає в наявності |
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| APTC60AM45BC1G | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP1 |
товару немає в наявності |
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| APTC60AM45BC1G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP1; Press-in PCB; 250W Case: SP1 Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SiC Gate-source voltage: ±20V Topology: boost chopper; MOSFET half-bridge Pulsed drain current: 130A Type of semiconductor module: MOSFET transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 250W |
товару немає в наявності |