Технічний опис APTC60DDAM45T1G Microchip Technology
Description: MOSFET 2N-CH 600V 49A SP1, Packaging: Tray, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Dual Buck Chopper), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 49A, Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V, Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 3mA, Supplier Device Package: SP1.
Інші пропозиції APTC60DDAM45T1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APTC60DDAM45T1G | Виробник : MICROCHIP TECHNOLOGY |
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товару немає в наявності |
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APTC60DDAM45T1G | Виробник : Microchip Technology |
![]() Packaging: Tray Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N Channel (Dual Buck Chopper) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SP1 |
товару немає в наявності |
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APTC60DDAM45T1G | Виробник : Microchip Technology |
![]() |
товару немає в наявності |