Технічний опис APTC60HM70BT3G Microchip Technology
Description: MOSFET 4N-CH 600V 39A SP3, Packaging: Tray, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 39A, Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V, Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V, Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3.9V @ 2.7mA, Supplier Device Package: SP3.
Інші пропозиції APTC60HM70BT3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTC60HM70BT3G | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A Case: SP3F Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 70mΩ Pulsed drain current: 160A Power dissipation: 250W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
товару немає в наявності |
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| APTC60HM70BT3G | Виробник : Microchip Technology |
Description: MOSFET 4N-CH 600V 39A SP3 Packaging: Tray Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: SP3 |
товару немає в наявності |
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| APTC60HM70BT3G | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-COOLMOS-SP3F |
товару немає в наявності |
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| APTC60HM70BT3G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A Case: SP3F Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 70mΩ Pulsed drain current: 160A Power dissipation: 250W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw |
товару немає в наявності |