APTC60HM70BT3G Microchip Technology

Description: MOSFET 4N-CH 600V 39A SP3, Packaging: Tray, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 39A, Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V, Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V, Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3.9V @ 2.7mA, Supplier Device Package: SP3.