Технічний опис APTC60HM70RT3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: diode/transistor, Drain-source voltage: 600V, Drain current: 29A, Case: SP3F, Topology: H-bridge; NTC thermistor; single-phase diode bridge, Electrical mounting: Press-in PCB, On-state resistance: 70mΩ, Pulsed drain current: 160A, Power dissipation: 250W, Technology: CoolMOS™, Gate-source voltage: ±20V, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APTC60HM70RT3G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APTC60HM70RT3G | Виробник : MICROCHIP TECHNOLOGY |
![]() Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A Case: SP3F Topology: H-bridge; NTC thermistor; single-phase diode bridge Electrical mounting: Press-in PCB On-state resistance: 70mΩ Pulsed drain current: 160A Power dissipation: 250W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw кількість в упаковці: 1 шт |
товару немає в наявності |
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APTC60HM70RT3G | Виробник : Microsemi Power Products Group |
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товару немає в наявності |
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APTC60HM70RT3G | Виробник : Microchip Technology |
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товару немає в наявності |
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APTC60HM70RT3G | Виробник : MICROCHIP TECHNOLOGY |
![]() Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A Case: SP3F Topology: H-bridge; NTC thermistor; single-phase diode bridge Electrical mounting: Press-in PCB On-state resistance: 70mΩ Pulsed drain current: 160A Power dissipation: 250W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw |
товару немає в наявності |