APTC60HM70T1G Microchip Technology
Виробник: Microchip Technology
Description: MOSFET 4N-CH 600V 39A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP1
Description: MOSFET 4N-CH 600V 39A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: SP1
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис APTC60HM70T1G Microchip Technology
Description: MOSFET 4N-CH 600V 39A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 39A, Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V, Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V, Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 2.7mA, Supplier Device Package: SP1.
Інші пропозиції APTC60HM70T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTC60HM70T1G | Виробник : Microchip Technology |
 MOSFET Modules PM-MOSFET-COOLMOS-SP1 |
товару немає в наявності |