Технічний опис APTC60SKM24CT1G Microchip Technology
Description: MOSFET N-CH 600V 95A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V, Power Dissipation (Max): 462W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 5mA, Supplier Device Package: SP1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V.
Інші пропозиції APTC60SKM24CT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTC60SKM24CT1G | Виробник : MICROSEMI |
 SP1/Boost chopper Super Junction MOSFET Power Module APTC60SKM24кількість в упаковці: 1 шт |
товару немає в наявності |
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| APTC60SKM24CT1G | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 95A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SP1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V |
товару немає в наявності |
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APTC60SKM24CT1G | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP1 |
товару немає в наявності |
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| APTC60SKM24CT1G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 70A; SP1; Press-in PCB; 462W Mechanical mounting: screw Case: SP1 On-state resistance: 24mΩ Gate-source voltage: ±20V Drain current: 70A Pulsed drain current: 260A Power dissipation: 462W Topology: buck chopper; NTC thermistor Drain-source voltage: 600V Technology: SiC; SJ-MOSFET Semiconductor structure: SiC diode/transistor Type of semiconductor module: MOSFET transistor Electrical mounting: Press-in PCB |
товару немає в наявності |