Технічний опис APTC60SKM35T1G Microsemi
Description: MOSFET N-CH 600V 72A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 5.4mA, Supplier Device Package: SP1, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 518 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V.
Інші пропозиції APTC60SKM35T1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APTC60SKM35T1G | Виробник : Microsemi Corporation |
![]() Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 518 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V |
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