Технічний опис APTC80A10SCTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Drain current: 32A, Drain-source voltage: 800V, Semiconductor structure: SiC diode/transistor, Case: SP4, Type of module: MOSFET transistor, Technology: CoolMOS™; SiC; SJ-MOSFET, Gate-source voltage: ±30V, Topology: MOSFET half-bridge; NTC thermistor, On-state resistance: 0.1Ω, Pulsed drain current: 168A, Power dissipation: 416W, кількість в упаковці: 1 шт.
Інші пропозиції APTC80A10SCTG
| Фото | Назва | Виробник | Інформація |
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| APTC80A10SCTG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 32A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor On-state resistance: 0.1Ω Pulsed drain current: 168A Power dissipation: 416W кількість в упаковці: 1 шт |
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| APTC80A10SCTG | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 800V 42A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 42A Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SP4 |
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| APTC80A10SCTG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP4 |
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| APTC80A10SCTG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 32A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor On-state resistance: 0.1Ω Pulsed drain current: 168A Power dissipation: 416W |
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