Технічний опис APTC80A10SCTG Microchip Technology
Description: MOSFET 2N-CH 800V 42A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 416W, Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 42A, Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V, Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V, Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 3mA, Supplier Device Package: SP4.
Інші пропозиції APTC80A10SCTG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTC80A10SCTG | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 800V 42A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 42A Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V Rds On (Max) @ Id, Vgs: 100mOhm @ 21A, 10V Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: SP4 |
товару немає в наявності |
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| APTC80A10SCTG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP4 |
товару немає в наявності |
