Технічний опис APTC80A15SCTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Drain current: 21A, Drain-source voltage: 800V, Semiconductor structure: SiC diode/transistor, Case: SP4, Type of module: MOSFET transistor, Technology: CoolMOS™; SiC; SJ-MOSFET, Gate-source voltage: ±30V, Topology: MOSFET half-bridge; NTC thermistor, On-state resistance: 0.15Ω, Pulsed drain current: 112A, Power dissipation: 277W, кількість в упаковці: 1 шт.
Інші пропозиції APTC80A15SCTG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTC80A15SCTG | Виробник : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 112A Power dissipation: 277W кількість в упаковці: 1 шт |
товару немає в наявності |
||
| APTC80A15SCTG | Виробник : Microchip Technology |
Description: MOSFET 2N-CH 800V 28A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP4 |
товару немає в наявності |
||
 |
APTC80A15SCTG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP4 |
товару немає в наявності |
|
| APTC80A15SCTG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 112A Power dissipation: 277W |
товару немає в наявності |