Технічний опис APTC80H29SCTG Microchip Technology
Description: MOSFET 4N-CH 800V 15A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 156W, Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 15A, Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V, Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: SP4.
Інші пропозиції APTC80H29SCTG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APTC80H29SCTG | Виробник : Microchip Technology |
 Description: MOSFET 4N-CH 800V 15A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: SP4 |
товару немає в наявності |
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| APTC80H29SCTG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP4 |
товару немає в наявності |
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| APTC80H29SCTG | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw On-state resistance: 0.29Ω Drain current: 11A Gate-source voltage: ±30V Pulsed drain current: 60A Power dissipation: 156W Topology: H-bridge; NTC thermistor Drain-source voltage: 800V Technology: CoolMOS™; SiC; SJ-MOSFET Semiconductor structure: SiC diode/transistor Electrical mounting: FASTON connectors; screw Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Case: SP4 |
товару немає в наявності |