APTC80H29SCTG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.29Ω
Pulsed drain current: 60A
Power dissipation: 156W
кількість в упаковці: 1 шт
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Технічний опис APTC80H29SCTG MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Drain current: 11A, Drain-source voltage: 800V, Semiconductor structure: SiC diode/transistor, Case: SP4, Type of module: MOSFET transistor, Technology: CoolMOS™; SiC; SJ-MOSFET, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, On-state resistance: 0.29Ω, Pulsed drain current: 60A, Power dissipation: 156W, кількість в упаковці: 1 шт.
Інші пропозиції APTC80H29SCTG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTC80H29SCTG | Виробник : Microchip Technology |
Description: MOSFET 4N-CH 800V 15A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: SP4 |
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| APTC80H29SCTG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP4 |
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| APTC80H29SCTG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 11A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.29Ω Pulsed drain current: 60A Power dissipation: 156W |
товар відсутній |