APTC80H29T3G MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Type of module: MOSFET transistor
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
On-state resistance: 0.29Ω
Pulsed drain current: 60A
Power dissipation: 156W
кількість в упаковці: 1 шт
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Технічний опис APTC80H29T3G MICROCHIP TECHNOLOGY
Description: MOSFET 4N-CH 800V 15A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 156W, Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 15A, Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V, Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: SP3.
Інші пропозиції APTC80H29T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTC80H29T3G | Виробник : Microchip Technology |
Description: MOSFET 4N-CH 800V 15A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: SP3 |
товару немає в наявності |
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| APTC80H29T3G | Виробник : Microchip Technology |
MOSFET Modules PM-MOSFET-COOLMOS-SP3 |
товару немає в наявності |
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| APTC80H29T3G | Виробник : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 11A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP3 Type of module: MOSFET transistor Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.29Ω Pulsed drain current: 60A Power dissipation: 156W |
товару немає в наявності |