Технічний опис APTC80TA15PG Microchip Technology
Description: MOSFET 6N-CH 800V 28A SP6-P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 277W, Drain to Source Voltage (Vdss): 800V, Current - Continuous Drain (Id) @ 25°C: 28A, Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V, Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V, Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 2mA, Supplier Device Package: SP6-P.
Інші пропозиції APTC80TA15PG
| Фото | Назва | Виробник | Інформація |
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| APTC80TA15PG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP6P Type of module: MOSFET transistor Technology: CoolMOS™ Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W кількість в упаковці: 1 шт |
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APTC80TA15PG | Виробник : Microchip Technology |
Description: MOSFET 6N-CH 800V 28A SP6-P Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP6-P |
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| APTC80TA15PG | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SP6P |
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| APTC80TA15PG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP6P Type of module: MOSFET transistor Technology: CoolMOS™ Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W |
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