APTC90SKM60CT1G Microchip Technology

Description: MOSFET N-CH 900V 59A SP1, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SP1, Vgs(th) (Max) @ Id: 3.5V @ 6mA, Power Dissipation (Max): 462W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V, Current - Continuous Drain (Id) @ 25°C: 59A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Bulk.