Технічний опис APTCV60TLM24T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A, Mechanical mounting: screw, Pulsed drain current: 260A, Power dissipation: 462W, Technology: Field Stop; SJ-MOSFET; Trench, Drain current: 70A, Drain-source voltage: 600V, Electrical mounting: Press-in PCB, Gate-source voltage: ±20V, Type of module: MOSFET/IGBT transistor, Semiconductor structure: diode/transistor, Case: SP3F, On-state resistance: 24mΩ, Collector current: 75A, Topology: NTC thermistor; three-level inverter; single-phase, кількість в упаковці: 1 шт.
Інші пропозиції APTCV60TLM24T3G
| Фото | Назва | Виробник | Інформація |
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| APTCV60TLM24T3G | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Mechanical mounting: screw Pulsed drain current: 260A Power dissipation: 462W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 70A Drain-source voltage: 600V Electrical mounting: Press-in PCB Gate-source voltage: ±20V Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3F On-state resistance: 24mΩ Collector current: 75A Topology: NTC thermistor; three-level inverter; single-phase кількість в упаковці: 1 шт |
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| APTCV60TLM24T3G | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 100A 250W SP3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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APTCV60TLM24T3G | Виробник : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SP3F |
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| APTCV60TLM24T3G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3F; Press-in PCB; Idm: 260A Mechanical mounting: screw Pulsed drain current: 260A Power dissipation: 462W Technology: Field Stop; SJ-MOSFET; Trench Drain current: 70A Drain-source voltage: 600V Electrical mounting: Press-in PCB Gate-source voltage: ±20V Type of module: MOSFET/IGBT transistor Semiconductor structure: diode/transistor Case: SP3F On-state resistance: 24mΩ Collector current: 75A Topology: NTC thermistor; three-level inverter; single-phase |
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