APTCV60TLM45T3G Microchip Technology


7536976790007247400-aptcv60tlm45t3g-rev2-datasheet.pdf Виробник: Microchip Technology
Trans IGBT Module N-CH 600V 100A 250000mW 24-Pin Case SP-3 Tube
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Технічний опис APTCV60TLM45T3G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A, Technology: Field Stop; SJ-MOSFET; Trench, Type of semiconductor module: MOSFET / IGBT transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, On-state resistance: 45mΩ, Gate-source voltage: ±20V, Drain current: 38A, Collector current: 75A, Pulsed drain current: 130A, Power dissipation: 250W, Drain-source voltage: 600V, Topology: NTC thermistor; three-level inverter; single-phase, Semiconductor structure: diode/transistor, Case: SP3F.

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APTCV60TLM45T3G APTCV60TLM45T3G Виробник : Microchip Technology APTCV60TLM45T3G-Rev2.pdf Description: IGBT MODULE 600V 100A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter - IGBT, FET
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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APTCV60TLM45T3G APTCV60TLM45T3G Виробник : Microchip Technology APTCV60TLM45T3G-Rev3.pdf MOSFET Modules PM-MOSFET-COOLMOS-SP3F
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APTCV60TLM45T3G Виробник : MICROCHIP TECHNOLOGY APTCV60TLM45T3G-Rev2.pdf Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Technology: Field Stop; SJ-MOSFET; Trench
Type of semiconductor module: MOSFET / IGBT transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
On-state resistance: 45mΩ
Gate-source voltage: ±20V
Drain current: 38A
Collector current: 75A
Pulsed drain current: 130A
Power dissipation: 250W
Drain-source voltage: 600V
Topology: NTC thermistor; three-level inverter; single-phase
Semiconductor structure: diode/transistor
Case: SP3F
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