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APTDC10H601G Microsemi Corporation

APTDC10H601G_Oct2012.pdf
Виробник: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 10A SP1
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: SP1
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
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Технічний опис APTDC10H601G Microsemi Corporation

Description: BRIDGE RECT 1PHASE 600V 10A SP1, Current - Reverse Leakage @ Vr: 200 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Average Rectified (Io): 10 A, Voltage - Peak Reverse (Max): 600 V, Supplier Device Package: SP1, Technology: Silicon Carbide Schottky, Diode Type: Single Phase, Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Bulk.