Технічний опис APTGF150DH120G Microchip Technology
Description: IGBT MODULE 1200V 200A 961W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Asymmetrical Bridge, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: NPT, Part Status: Obsolete, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 961 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V.
Інші пропозиції APTGF150DH120G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGF150DH120G | Виробник : Microchip Technology |
 Description: IGBT MODULE 1200V 200A 961W SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 961 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V |
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