APTGF50DA120TG Microsemi Corporation


APTGF50DA120TG.pdf Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
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Технічний опис APTGF50DA120TG Microsemi Corporation

Description: IGBT MODULE 1200V 75A 312W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: NPT, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 312 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V.