APTGF50DDA120T3G Microsemi Corporation


APTGF50DDA120T3G.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 70A 312W SP3
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 312 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 70 A
IGBT Type: NPT
Supplier Device Package: SP3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Configuration: Dual Boost Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP3
Packaging: Bulk
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Технічний опис APTGF50DDA120T3G Microsemi Corporation

Description: IGBT MODULE 1200V 70A 312W SP3, Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 312 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 70 A, IGBT Type: NPT, Supplier Device Package: SP3, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A, Configuration: Dual Boost Chopper, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP3, Packaging: Bulk.