APTGF50DU120TG Microsemi Corporation

Description: IGBT MODULE 1200V 75A 312W SP4, Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 312 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 75 A, Part Status: Obsolete, IGBT Type: NPT, Supplier Device Package: SP4, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Dual, Common Source, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP4, Packaging: Bulk.