Технічний опис APTGF90TDU60PG Microchip Technology
Description: IGBT MODULE 600V 110A 416W SP6P, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Triple, Dual - Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A, NTC Thermistor: No, Supplier Device Package: SP6-P, IGBT Type: NPT, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 416 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V.
Інші пропозиції APTGF90TDU60PG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGF90TDU60PG | Виробник : Microsemi Corporation |
 Description: IGBT MODULE 600V 110A 416W SP6PPackaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Triple, Dual - Common Source Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A NTC Thermistor: No Supplier Device Package: SP6-P IGBT Type: NPT Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 416 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
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