Технічний опис APTGL475A120D3G MICROSEMI
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 475A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Collector current: 475A, Case: D3, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Technology: Field Stop; Trench, Mechanical mounting: screw, Application: motors.
Інші пропозиції APTGL475A120D3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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APTGL475A120D3G | Виробник : Microchip Technology |
 Description: IGBT MODULE 1200V 610A 2080W D3 |
товару немає в наявності |
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| APTGL475A120D3G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-D3 |
товару немає в наявності |
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| APTGL475A120D3G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 475A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 475A Case: D3 Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Technology: Field Stop; Trench Mechanical mounting: screw Application: motors |
товару немає в наявності |