APTGLQ100H65T3G Microchip Technology

Description: IGBT MODULE 650V 135A 350W SP3F, Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V, Current - Collector Cutoff (Max): 50 µA, Power - Max: 350 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 135 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP3F, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Full Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.