APTGLQ200H65G Microchip Technology
Виробник: Microchip TechnologyDescription: IGBT MODULE 650V 270A 680W SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 270 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 75 µA
Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V
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Технічний опис APTGLQ200H65G Microchip Technology
Description: IGBT MODULE 650V 270A 680W SP6, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 270 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 680 W, Current - Collector Cutoff (Max): 75 µA, Input Capacitance (Cies) @ Vce: 12.2 nF @ 25 V.
Інші пропозиції APTGLQ200H65G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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APTGLQ200H65G | Виробник : Microchip / Microsemi |
IGBT Modules DOR HOLD CC6254 |
товару немає в наявності |
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| APTGLQ200H65G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 650V; SP6C Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 650V Collector current: 200A Case: SP6C Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 540A Technology: Field Stop; Trench Mechanical mounting: screw Application: motors |
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