Технічний опис APTGLQ200HR120G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV, Topology: 3-level inverter TNPC, Technology: Field Stop; Trench, Case: SP6C, Collector current: 200A, Pulsed collector current: 640A, Gate-emitter voltage: ±20V, Semiconductor structure: common emitter; transistor/transistor, Max. off-state voltage: 1.2kV, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, кількість в упаковці: 5 шт.
Інші пропозиції APTGLQ200HR120G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APTGLQ200HR120G | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV Topology: 3-level inverter TNPC Technology: Field Stop; Trench Case: SP6C Collector current: 200A Pulsed collector current: 640A Gate-emitter voltage: ±20V Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 5 шт |
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APTGLQ200HR120G | Виробник : Microsemi Corporation |
Description: PWR MOD PHASE LEG/DUAL CE SP6 |
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| APTGLQ200HR120G | Виробник : Microchip Technology |
IGBT Modules DOR CC6214 |
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| APTGLQ200HR120G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV Topology: 3-level inverter TNPC Technology: Field Stop; Trench Case: SP6C Collector current: 200A Pulsed collector current: 640A Gate-emitter voltage: ±20V Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |