APTGLQ40DDA120CT3G Microchip Technology
Виробник: Microchip TechnologyDescription: IGBT MODULE 1200V 75A 250W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Through Hole
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
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Технічний опис APTGLQ40DDA120CT3G Microchip Technology
Description: IGBT MODULE 1200V 75A 250W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Through Hole, Input: Standard, Configuration: Dual Boost Chopper, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, NTC Thermistor: Yes, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V.
Інші пропозиції APTGLQ40DDA120CT3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGLQ40DDA120CT3G | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
товару немає в наявності |
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| APTGLQ40DDA120CT3G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor Case: SP3F Topology: boost chopper x2; NTC thermistor Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 40A Max. off-state voltage: 1.2kV Pulsed collector current: 160A Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Technology: Field Stop; Trench Type of semiconductor module: IGBT Application: motors |
товару немає в наявності |