APTGLQ40DDA120CT3G MICROCHIP TECHNOLOGY
Виробник: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor
Case: SP3F
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; Trench
Topology: boost chopper x2; NTC thermistor
Type of semiconductor module: IGBT
кількість в упаковці: 11 шт
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Технічний опис APTGLQ40DDA120CT3G MICROCHIP TECHNOLOGY
Description: IGBT MODULE 1200V 75A 250W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Through Hole, Input: Standard, Configuration: Dual Boost Chopper, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, NTC Thermistor: Yes, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V.
Інші пропозиції APTGLQ40DDA120CT3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGLQ40DDA120CT3G | Виробник : Microchip Technology |
Description: IGBT MODULE 1200V 75A 250W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Through Hole Input: Standard Configuration: Dual Boost Chopper Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V |
товару немає в наявності |
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| APTGLQ40DDA120CT3G | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
товару немає в наявності |
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| APTGLQ40DDA120CT3G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor Case: SP3F Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; Trench Topology: boost chopper x2; NTC thermistor Type of semiconductor module: IGBT |
товару немає в наявності |