Технічний опис APTGLQ50H65T3G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor, Collector current: 50A, Case: SP3F, Gate-emitter voltage: ±20V, Pulsed collector current: 140A, Max. off-state voltage: 650V, Technology: Field Stop; Trench, Topology: H-bridge; NTC thermistor, Type of semiconductor module: IGBT, Application: motors, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Semiconductor structure: transistor/transistor.
Інші пропозиції APTGLQ50H65T3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APTGLQ50H65T3G | Виробник : Microsemi Corporation |
 Description: POWER MODULE - IGBT |
товару немає в наявності |
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APTGLQ50H65T3G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP3F |
товару немає в наявності |
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| APTGLQ50H65T3G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Collector current: 50A Case: SP3F Gate-emitter voltage: ±20V Pulsed collector current: 140A Max. off-state voltage: 650V Technology: Field Stop; Trench Topology: H-bridge; NTC thermistor Type of semiconductor module: IGBT Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |