Технічний опис APTGLQ600A65T6G Microchip Technology
Description: IGBT MODULE 650V 1200A 2000W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Through Hole, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A, NTC Thermistor: Yes, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 1200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 2000 W, Current - Collector Cutoff (Max): 600 µA, Input Capacitance (Cies) @ Vce: 36.6 nF @ 25 V.
Інші пропозиції APTGLQ600A65T6G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APTGLQ600A65T6G | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Topology: IGBT half-bridge; NTC thermistor Technology: Field Stop; Trench Case: SP6C Application: motors Collector current: 600A Pulsed collector current: 1.5kA Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 4 шт |
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| APTGLQ600A65T6G | Виробник : Microchip Technology |
Description: IGBT MODULE 650V 1200A 2000W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: SP6 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 2000 W Current - Collector Cutoff (Max): 600 µA Input Capacitance (Cies) @ Vce: 36.6 nF @ 25 V |
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| APTGLQ600A65T6G | Виробник : Microchip Technology |
IGBT Modules DOR CC6231 |
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| APTGLQ600A65T6G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A Topology: IGBT half-bridge; NTC thermistor Technology: Field Stop; Trench Case: SP6C Application: motors Collector current: 600A Pulsed collector current: 1.5kA Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 650V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT |
товар відсутній |