APTGLQ75H65T1G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge; NTC thermistor
Max. off-state voltage: 650V
Collector current: 75A
Case: SP1
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Field Stop; Trench
Mechanical mounting: screw
кількість в упаковці: 12 шт
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Технічний опис APTGLQ75H65T1G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 650V 150A 250W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Through Hole, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V.
Інші пропозиції APTGLQ75H65T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGLQ75H65T1G | Виробник : Microchip Technology |
Description: IGBT MODULE 650V 150A 250W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Through Hole Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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| APTGLQ75H65T1G | Виробник : Microsemi |
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| APTGLQ75H65T1G | Виробник : Microchip Technology |
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| APTGLQ75H65T1G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge; NTC thermistor Max. off-state voltage: 650V Collector current: 75A Case: SP1 Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |