APTGLQ75H65T1G Microchip Technology
Виробник: Microchip TechnologyDescription: IGBT MODULE 650V 150A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
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Технічний опис APTGLQ75H65T1G Microchip Technology
Description: IGBT MODULE 650V 150A 250W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Through Hole, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V.
Інші пропозиції APTGLQ75H65T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGLQ75H65T1G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP1 |
товару немає в наявності |
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| APTGLQ75H65T1G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Collector current: 75A Case: SP1 Gate-emitter voltage: ±20V Pulsed collector current: 200A Electrical mounting: Press-in PCB Application: motors Type of semiconductor module: IGBT Max. off-state voltage: 650V Mechanical mounting: screw Topology: H-bridge; NTC thermistor Technology: Field Stop; Trench Semiconductor structure: transistor/transistor |
товару немає в наявності |