Технічний опис APTGT100A602G Microchip Technology
Description: IGBT MODULE 600V 150A 340W SP2, Packaging: Bulk, Package / Case: SP2, Mounting Type: Through Hole, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SP2, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 340 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V.
Інші пропозиції APTGT100A602G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGT100A602G | Виробник : Microsemi Corporation |
Description: IGBT MODULE 600V 150A 340W SP2 Packaging: Bulk Package / Case: SP2 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SP2 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
товару немає в наявності |