Технічний опис APTGT100BB60T3G MICROCHIP TECHNOLOGY
Description: IGBT MODULE 600V 150A 340W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Through Hole, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 340 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V.
Інші пропозиції APTGT100BB60T3G
| Фото | Назва | Виробник | Інформація |
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APTGT100BB60T3G | Виробник : Microchip Technology |
 Description: IGBT MODULE 600V 150A 340W SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 340 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V |
товару немає в наявності |
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| APTGT100BB60T3G | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
товару немає в наявності |