Технічний опис APTGT100H120G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C, Mechanical mounting: screw, Application: motors, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Case: SP6C, Topology: H-bridge, Semiconductor structure: transistor/transistor, Type of semiconductor module: IGBT, Electrical mounting: FASTON connectors; screw, Technology: Field Stop; Trench.
Інші пропозиції APTGT100H120G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| APTGT100H120G | Виробник : Microchip / Microsemi |
 IGBT Modules DOR CC6073 |
товару немає в наявності |
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| APTGT100H120G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP6C |
товару немає в наявності |
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| APTGT100H120G | Виробник : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Mechanical mounting: screw Application: motors Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Max. off-state voltage: 1.2kV Case: SP6C Topology: H-bridge Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Electrical mounting: FASTON connectors; screw Technology: Field Stop; Trench |
товару немає в наявності |