APTGT100TL170G Microchip Technology

Description: IGBT MODULE 1700V 150A 560W SP6, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V, Current - Collector Cutoff (Max): 350 µA, Power - Max: 560 W, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 150 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP6, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Level Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.