Технічний опис APTGT150A60T1G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Technology: Field Stop; Trench, Collector current: 150A, Case: SP1, Gate-emitter voltage: ±20V, Pulsed collector current: 350A, Semiconductor structure: transistor/transistor, Max. off-state voltage: 0.6kV, Application: motors, Electrical mounting: Press-in PCB, Topology: IGBT half-bridge; NTC thermistor, Mechanical mounting: screw, Type of module: IGBT, кількість в упаковці: 14 шт.
Інші пропозиції APTGT150A60T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT150A60T1G | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Technology: Field Stop; Trench Collector current: 150A Case: SP1 Gate-emitter voltage: ±20V Pulsed collector current: 350A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: motors Electrical mounting: Press-in PCB Topology: IGBT half-bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT кількість в упаковці: 14 шт |
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APTGT150A60T1G | Виробник : Microsemi Power Products Group |
Description: IGBT PHASE LEG 600V 225A SP1 |
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| APTGT150A60T1G | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
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| APTGT150A60T1G | Виробник : Microchip Technology |
IGBT Modules DOR CC8063 |
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| APTGT150A60T1G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Technology: Field Stop; Trench Collector current: 150A Case: SP1 Gate-emitter voltage: ±20V Pulsed collector current: 350A Semiconductor structure: transistor/transistor Max. off-state voltage: 0.6kV Application: motors Electrical mounting: Press-in PCB Topology: IGBT half-bridge; NTC thermistor Mechanical mounting: screw Type of module: IGBT |
товар відсутній |