Технічний опис APTGT200DU60TG Microchip Technology
Description: IGBT MODULE 600V 290A 625W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 290 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 625 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V.
Інші пропозиції APTGT200DU60TG
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| APTGT200DU60TG | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 200A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 1 шт |
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APTGT200DU60TG | Виробник : Microchip Technology |
Description: IGBT MODULE 600V 290A 625W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 625 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V |
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| APTGT200DU60TG | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP4 |
товар відсутній |
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| APTGT200DU60TG | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2; NTC thermistor Max. off-state voltage: 0.6kV Collector current: 200A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |