Технічний опис APTGT200H120G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: H-bridge, Max. off-state voltage: 1.2kV, Collector current: 200A, Case: SP6C, Application: motors, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 400A, Technology: Field Stop; Trench, Mechanical mounting: screw, кількість в упаковці: 4 шт.
Інші пропозиції APTGT200H120G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTGT200H120G | Виробник : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw кількість в упаковці: 4 шт |
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| APTGT200H120G | Виробник : Microsemi Power Products Group |
Description: IGBT MOD TRENCH FULL BRIDGE SP6 |
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| APTGT200H120G | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
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| APTGT200H120G | Виробник : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP6C |
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| APTGT200H120G | Виробник : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
товар відсутній |