Технічний опис APTGT200H60G Microchip Technology
Description: IGBT MODULE 600V 290A 625W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 290 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 625 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V.
Інші пропозиції APTGT200H60G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| APTGT200H60G | Виробник : Microchip Technology |
 Description: IGBT MODULE 600V 290A 625W SP6Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 625 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V |
товару немає в наявності |
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| APTGT200H60G | Виробник : Microsemi |
IGBT Modules Power Module - IGBT |
товару немає в наявності |